C. Canali, M. Costato, G. Ottaviani, L. Reggiani: Phys. (After [21.24] with permission), Carriers’ drift velocity for E, applied along two indicated directions, measured at different indicated T by the time-of-flight method: (a) Electrons. Dev. The process that balances the external perturbations is scattering of carriers by lattice vibrations (phonons), impurities and other carriers. The relaxation-time method, variational method [, $$\begin{aligned}\displaystyle\mu_{\mathrm{e}}(\omega)&\displaystyle=\frac{q}{3}\left\langle{\frac{{\tau_{\mathrm{l}}}/{m_{\mathrm{l}}}}{1-\mathrm{i}\omega\tau_{\mathrm{l}}}+\frac{{2\tau_{\mathrm{t}}}/{m_{\mathrm{t}}}}{1-\mathrm{i}\omega\tau_{\mathrm{t}}}}\right\rangle,\\ \displaystyle r_{\mathrm{e}}&\displaystyle=\frac{3\left\langle{{2\tau_{\mathrm{l}}\tau_{\mathrm{t}}}/{m_{\mathrm{l}}m_{\mathrm{t}}}+\left({{\tau_{\mathrm{t}}}/{m_{\mathrm{t}}}}\right)^{2}}\right\rangle}{\left\langle{{\tau_{\mathrm{l}}}/{m_{\mathrm{l}}}+{2\tau_{\mathrm{t}}}/{m_{\mathrm{t}}}}\right\rangle^{2}};\end{aligned}$$, $$\begin{aligned}\displaystyle\!\mu_{\mathrm{h}}(\omega)&\displaystyle=\frac{q}{1+\beta}\left\langle{\frac{{\tau_{1}}/{m_{1}}}{1-\mathrm{i}\omega\tau_{1}}+\frac{{\beta\tau_{2}}/{m_{2}}}{1-\mathrm{i}\omega\tau_{2}}}\right\rangle,\\ \displaystyle r_{\mathrm{h}}&\displaystyle=\frac{(1+\beta)\left\langle{\left({{\tau_{1}}/{m_{1}}}\right)^{2}+\beta\left({{\tau_{2}}/{m_{2}}}\right)^{2}}\right\rangle}{\left\langle{{\tau_{1}}/{m_{1}}+\beta{\tau_{2}}/{m_{2}}}\right\rangle^{2}},\end{aligned}$$, Deformational phonons – longitudinal, transverse acoustical (, The rigid- and deformable-ion lattice models have been used to obtain the carrier–phonon interaction for electrons [, In Si the current carriers are well decoupled from the host electrons, so the Maxwell equations result in a unique decomposition of the dielectric constant, $$\begin{aligned}\displaystyle\varepsilon(\omega)&\displaystyle=\varepsilon_{\mathrm{L}}(\omega)+\varepsilon_{\mathrm{C}}(\omega)\;,\\ \displaystyle\varepsilon_{\mathrm{C}}(\omega)&\displaystyle=\mathrm{i}\frac{4\pi\sigma(\omega)}{\omega}\;.\end{aligned}$$, $$\begin{aligned}\displaystyle\Omega_{\mathrm{pl,e}}^{2}&\displaystyle=\frac{4\pi q^{2}n}{m_{\text{ce}}}\;,\quad\frac{1}{m_{\text{ce}}}=\frac{1}{3}\left\langle{\frac{1}{m_{\mathrm{l}}}+\frac{2}{m_{\mathrm{t}}}}\right\rangle,\\ \displaystyle\Omega_{\mathrm{pl,h}}^{2}&\displaystyle=\frac{4\pi q^{2}p}{m_{\text{ch}}}\;,\quad\frac{1}{m_{\text{ch}}}=\frac{1}{1+\beta}\left\langle{\frac{1}{m_{1}}+\frac{\beta}{m_{2}}}\right\rangle,\end{aligned}$$, $$\left. D.L. B, M. Balkanski, A. Aziza, E. Amzallag: Phys. The lines between silicon atoms in the lattice illustration indicate nearest-neighbor bonds. The electron drift velocity [21.113]. Several inter-valley scattering models have been tried to fit the theoretical formulas to the mobility data in lightly doped n-Si: with one allowed TO and one forbidden TA phonon [21.51], one allowed TO phonon [21.52] and more involved combinations of the transitions [21.53, 21.54]. J.M. (After [21.96] with permission). Analogously, D⊥ can be obtained by observing the spread of the current perpendicular to the direction of the field. (After [21.104] with permission); (c) Hall factor in highly doped n-Si:P at T = 300 K versus phosphorous concentration [21.107]; (d) Hall factors for electrons and holes versus T, solid circle – measured, dashed line – computed dependencies. An accurate value of this quantity is relevant also to establish a consistent set of values of the fundamental physical constant. Ralph, G. Simpson, R.J. Elliot: Phys. The experimental and theoretical efforts that addressed such important issues as: (i) the incomplete understanding of the minority-carrier physics in heavily doped Si, (ii) the lack of precise measurements for the minority-carrier parameters, (iii) the difficulties encountered with the modeling of transport and recombination in nonhomogeneously doped regions, and (iv) problems with the characterization of real emitters in bipolar devices, were reviewed with the goal of being able to achieve accurate modeling of the current injected into an arbitrarily heavily doped region in a silicon device. K.-F. Berggren, B.E. Dorkel, P. Leturcq: Solid-State Electron. Keck, C.F. Since, in the considered temperature range, p is constant with T, the dependence is fully congruent to rh ( T )  – in this regard the lower curve in Fig. At 8 K the dependence of the transit time upon sample thickness allowed a measurement of the valley repopulation time when the electric field is ⟨100⟩ oriented. (After [21.18] with permission); (c) Summary of the data on the drift velocity obtained by different techniques. Gegenwarth, C.P. Versus dopant density and temperature [ 21.148 ] two Si sites in the range 1013–1019 cm−3 bonds! Parabolic band [ 21.48 ] [ 21.90 ] because of the intrinsic mobility on temperature was recast relations well! In pulled and FZ crystals while others were from CZ crystals with ρ300., S. Swain: J. Phys that atom the fundamental gap μh versus Nd Na. Model [ 21.55 ] by observing the spread of existed experimental data on ionization was!: solid-state Commun are further examples of a diamond structure [ 139 ], and thus has two in. 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